Discrete Semiconductor Products

SQ7415AEN-T1_BE3

Obsolete

MOSFET P-CH 60V 16A 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 16A 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQ7415AEN-T1_BE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1385 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	53 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Qualification	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Technology	FET Type	Supplier Device Package	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SQ7415AEN-T1_BE3	AEC-Q101	Surface Mount	20 V	53 W	65 mOhm	60 V	16 A	38 nC	2.5 V	PowerPAK® 1212-8	MOSFET (Metal Oxide)	P-Channel	PowerPAK® 1212-8	Automotive	-55 °C	175 ░C	1385 pF	4.5 V 10 V
Vishay General Semiconductor - Diodes Division SQ7415AEN-T1_GE3		Surface Mount	20 V	53 W	65 mOhm	60 V	16 A	38 nC	2.5 V	PowerPAK® 1212-8	MOSFET (Metal Oxide)	P-Channel	PowerPAK® 1212-8		-55 °C	175 ░C	1385 pF	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available