Specification	KSA992FBU

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300 hFE
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

KSA992 Series

PNP Epitaxial Silicon Transistor

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]	Transistor Type	Package / Case	Frequency - Transition
ON Semiconductor KSA992PBU	TO-92-3	50 mA	1 µA	150 °C	120 V	200	300 mV	Through Hole	500 mW	PNP	TO-226-3 TO-92-3	100 MHz
ON Semiconductor KSA992FBU	TO-92-3	50 mA	1 µA	150 °C	120 V	300 hFE	300 mV	Through Hole	500 mW	PNP	TO-226-3 TO-92-3	100 MHz
ON Semiconductor KSA992FATA	TO-92-3	50 mA	1 µA	150 °C	120 V	200	300 mV	Through Hole	500 mW	PNP	TO-226-3 TO-92-3	100 MHz
ON Semiconductor KSA992PTA	TO-92-3	50 mA	1 µA	150 °C	120 V	200	300 mV	Through Hole	500 mW	PNP	TO-226-3 TO-92-3	100 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources