Discrete Semiconductor Products

SI1031X-T1-GE3

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MOSFET P-CH 20V 155MA SC75A

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Discrete Semiconductor Products

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MOSFET P-CH 20V 155MA SC75A

Technical Specifications

Parameters and characteristics for this part

Specification	SI1031X-T1-GE3

Current - Continuous Drain (Id) @ 25°C	155 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	SC-75A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1.2 V

Part	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI1031X-T1-GE3	6 V	MOSFET (Metal Oxide)	-55 °C	150 °C	P-Channel	20 V	300 mW	SC-75 SOT-416	4.5 V	1.5 nC	8 Ohm	1.5 V 4.5 V	1.2 V	Surface Mount	SC-75A	155 mA
Vishay General Semiconductor - Diodes Division SI1031X-T1-E3	6 V	MOSFET (Metal Oxide)	-55 °C	150 °C	P-Channel	20 V	300 mW	SC-75 SOT-416	4.5 V	1.5 nC	8 Ohm	1.5 V 4.5 V	1.2 V	Surface Mount	SC-75A	155 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 155mA (Ta) 300mW (Ta) Surface Mount SC-75A

Technical documentation and resources