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DocumentsCBR08P65D | Datasheet
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DocumentsCBR08P65D | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | CBR08P65D |
|---|---|
| Current - Average Rectified (Io) | 29 A |
| Current - Reverse Leakage | 25 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252-2L |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 5 | $ 2.96 | 1m+ |
CAD
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Description
General part information
CBR08P65D
DIODE SIL CARB 650V 29A TO2522L
Documents
Technical documentation and resources