Discrete Semiconductor Products

2N4124 TRA TIN/LEAD

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BIPOLAR TRANSISTORS - BJT 30VCBO 25VCEO 5.0VEBO 200MA 625MW

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT 30VCBO 25VCEO 5.0VEBO 200MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N4124 TRA TIN/LEAD

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]
Central Semiconductor Corp 2N4124 TRA TIN/LEAD	25 V	TO-226AA	TO-226-3 TO-92-3	120	50 nA	NPN	200 mA	300 MHz	Through Hole	TO-92-3	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.18
Mouser	N/A	4000	$ 0.18
		10000	$ 0.17

General part information

BIPOLAR TRANSISTORS - BJT 30VCBO 25VCEO 5.0VEBO 200MA 625MW

Technical documentation and resources