Discrete Semiconductor Products

SUP53P06-20-GE3

Obsolete

MOSFET P-CH 60V 9.2A/53A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 9.2A/53A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP53P06-20-GE3

Current - Continuous Drain (Id) (Ta)	9.2 A
Current - Continuous Drain (Id) (Tc)	53 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	115 nC, 115 nC
Input Capacitance (Ciss) (Max)	3500 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	3.1 W, 104.2 W
Rds On (Max)	19.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	Technology	Vgs (Max)	Package Name	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Vgs(th) (Max)
Vishay Dale SUP53P06-20-GE3	19.5 mOhm	3500 pF	MOSFET (Metal Oxide)	20 V	TO-220AB	60 V	115 nC 115 nC	3.1 W 104.2 W	-55 °C	150 °C	TO-220-3	53 A	9.2 A	P-Channel	10 V	4.5 V	Through Hole	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.18	1m+

3D models and CAD resources for this part

General part information

P-Channel 60 V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB

Technical documentation and resources