Discrete Semiconductor Products

IPB026N10NF2SATMA1

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INFINEON'S STRONGIRFET™ 2 POWER MOSFET 100 V FEATURES LOW RDS(ON) OF 2.6 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.

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Discrete Semiconductor Products

IPB026N10NF2SATMA1

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INFINEON

INFINEON'S STRONGIRFET™ 2 POWER MOSFET 100 V FEATURES LOW RDS(ON) OF 2.6 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB026N10NF2SATMA1

Current - Continuous Drain (Id) @ 25°C	162 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	154 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	2.65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

IPB026N Series

Part	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPB026N10NF2SATMA1	3.8 V	MOSFET (Metal Oxide)	6 V 10 V	7300 pF	100 V	2.65 mOhm	N-Channel	175 °C	-55 °C	Surface Mount	20 V	162 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	250 W	154 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.68
		10	$ 3.10
		100	$ 2.20
	Digi-Reel®	1	$ 4.68
		10	$ 3.10
		100	$ 2.20
	N/A	1923	$ 4.45
	Tape & Reel (TR)	800	$ 1.73
		1600	$ 1.73

Description

General part information

IPB026N Series

Infineon'sStrongIRFET™ 2power MOSFET 100 V features low RDS(on)of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.

Documents

Technical documentation and resources