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PUMZ1,115
Discrete Semiconductor Products

PUMZ1,115

Active
Nexperia USA Inc.

NPN/PNP GENERAL PURPOSE TRANSISTOR

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PUMZ1,115
Discrete Semiconductor Products

PUMZ1,115

Active
Nexperia USA Inc.

NPN/PNP GENERAL PURPOSE TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPUMZ1,115
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-363, SC-88, 6-TSSOP
Power - Max [Max]300 mW
Supplier Device Package6-TSSOP
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 245$ 0.24

Description

General part information

PUMZ1 Series

NPN/PNP general-purpose double transistors in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.