Discrete Semiconductor Products

SPP100N08S2-07

Obsolete

MOSFET N-CH 75V 100A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 75V 100A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP100N08S2-07

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	200 nC
Input Capacitance (Ciss) (Max) @ Vds	6020 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	7.1 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	Package / Case	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON SPP100N08S2-07	PG-TO220-3-1	100 A	6020 pF	200 nC	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	TO-220-3	300 W	N-Channel	4 V	20 V	4.5 V 10 V	75 V	7.1 mOhm
INFINEON SPP100N03S203	PG-TO220-3-1	100 A		150 nC	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	TO-220-3	300 W	N-Channel	4 V	20 V	10 V	30 V	3.3 mOhm	7020 pF
INFINEON SPP100N03S2-03	PG-TO220-3-1	100 A		150 nC	175 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	TO-220-3	300 W	N-Channel	4 V	20 V	10 V	30 V	3.3 mOhm	7020 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.66

General part information

N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources