Discrete Semiconductor Products

IMBG65R083M1HXTMA1

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THE IMBG65R083M1H COOLSIC™ MOSFET 650V IS A COMPACT SMD 7 PIN SIC MOSFET BUILT ON A STATE-OF-THE-ART INFINEON SIC TRENCH TECHNOLOGY.

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DocumentsTechnical Data Sheet EN IMBG65R083M1H +5

Discrete Semiconductor Products

IMBG65R083M1HXTMA1

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INFINEON

THE IMBG65R083M1H COOLSIC™ MOSFET 650V IS A COMPACT SMD 7 PIN SIC MOSFET BUILT ON A STATE-OF-THE-ART INFINEON SIC TRENCH TECHNOLOGY.

Deep-Dive with AI

DocumentsTechnical Data Sheet EN IMBG65R083M1H +5

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMBG65R083M1HXTMA1

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	624 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max) [Max]	126 W
Rds On (Max) @ Id, Vgs [Max]	111 mOhm
Supplier Device Package	PG-TO263-7-12
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.7 V

CoolSiC 650V Series

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IMBG65R022M1HXTMA1	64 A	5.7 V	67 nC	2288 pF	PG-TO263-7-12	650 V	300 W	N-Channel	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	18 V	175 °C	-55 °C	30 mOhm	-5 V	23 V
INFINEON IMBG65R083M1HXTMA1	28 A	5.7 V	19 nC		PG-TO263-7-12	650 V		N-Channel	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	18 V	175 °C	-55 °C		-5 V	23 V	624 pF	126 W	111 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 6.72
Mouser	N/A	1	$ 7.40
		10	$ 5.35
		100	$ 4.21
		500	$ 3.54
		1000	$ 3.30
		2000	$ 3.29
Newark	Each (Supplied on Cut Tape)	1	$ 7.70
		10	$ 5.38
		25	$ 5.08
		50	$ 4.78
		100	$ 4.48
		250	$ 4.09
		500	$ 3.69
		1000	$ 3.26

Description

General part information

CoolSiC 650V Series

CoolSiC™ MOSFET technologyleverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R083M1HCoolSiC™ MOSFET 650Vis a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in mid power applications. It is optimized to enable max system performance, compactness and reliability.

Documents

Technical documentation and resources

CoolSiC™ MOSFET 650 V M1 trench power device Infineon’s first 650 V silicon carbide MOSFET for industrial applications

Application Notes

SiC MOSFET Enhances Stability under Real Application Conditions - Bodo's Power

Article

FIT Report - IMBG65R083M1H

FIT Report

Infineon-MA005711409-MaterialContentSheet-v01_00-EN

Material Content SheetInfo