Discrete Semiconductor Products

GPA803-BP

Obsolete

DIODE GEN PURP 200V 8A TO220AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	GPA803-BP

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 ÁA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Speed [Min]	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
MCC (Micro Commercial Components) GPA803-BP	TO-220-2	150 °C	-65 C	200 mA 500 ns	TO-220AC	5 ÁA	Standard	Through Hole	50 pF	1.1 V	8 A	200 V
MCC (Micro Commercial Components) GPA803-BP	TO-220-2	150 °C	-65 C	200 mA 500 ns	TO-220AC	5 ÁA	Standard	Through Hole	50 pF	1.1 V	8 A	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 8A Through Hole TO-220AC

Technical documentation and resources