Discrete Semiconductor Products

IPAW70R950CEXKSA1

Obsolete

MOSFET N-CH 700V 7.4A TO220-3-31

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 700V 7.4A TO220-3-31

Technical Specifications

Parameters and characteristics for this part

Specification	IPAW70R950CEXKSA1

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC
Input Capacitance (Ciss) (Max) @ Vds	328 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	PG-TO220-3-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPAW70R950CEXKSA1	MOSFET (Metal Oxide)	68 W	7.4 A	3.5 V	20 V	10 V	328 pF	950 mOhm	TO-220-3 Full Pack	700 V	15.3 nC	-40 °C	150 °C	PG-TO220-3-FP	Through Hole	N-Channel
INFINEON IPAW70R600CEXKSA1	MOSFET (Metal Oxide)	86 W	10.5 A	3.5 V	20 V	10 V		600 mOhm	TO-220-3 Full Pack	700 V		-40 °C	150 °C	PG-TO220-3-FP	Through Hole	N-Channel	22 nC	474 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 700 V 7.4A (Tc) 68W (Tc) Through Hole PG-TO220-3-FP

Technical documentation and resources