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STMICROELECTRONICS STW3N150
Discrete Semiconductor Products

SPW47N60C3FKSA1

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INFINEON

POWER MOSFET, N CHANNEL, 650 V, 47 A, 0.07 OHM, TO-247, THROUGH HOLE

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STMICROELECTRONICS STW3N150
Discrete Semiconductor Products

SPW47N60C3FKSA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 650 V, 47 A, 0.07 OHM, TO-247, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPW47N60C3FKSA1
Current - Continuous Drain (Id) @ 25°C47 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs320 nC
Input Capacitance (Ciss) (Max) @ Vds6800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)415 W
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 9250$ 12.01
Tube 1$ 16.39
10$ 11.61
100$ 9.02
NewarkEach 1$ 12.56
10$ 11.26
25$ 8.33
50$ 7.75
100$ 7.16
480$ 7.14
720$ 7.13

Description

General part information

SPW47N60 Series

The SPW47N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

Documents

Technical documentation and resources