IRCZ24PBF

Obsolete

MOSFET N-CH 55V 17A TO220-5

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 17A TO220-5

Technical Specifications

Parameters and characteristics for this part

Specification	IRCZ24PBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Current Sensing
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-5
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-220-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	FET Feature	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Vishay General Semiconductor - Diodes Division IRCZ24PBF	Through Hole	24 nC	55 V	20 V	MOSFET (Metal Oxide)	100 mOhm	60 W	N-Channel	Current Sensing	4 V	TO-220-5	-55 °C	175 ░C	17 A	10 V	TO-220-5

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 17A (Tc) 60W (Tc) Through Hole TO-220-5

Technical documentation and resources