Discrete Semiconductor Products

PBSS4041SPN,115

Obsolete

TRANS NPN/PNP 60V 6.7A/5.9A 8SO

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Discrete Semiconductor Products

Obsolete

TRANS NPN/PNP 60V 6.7A/5.9A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4041SPN,115

Current - Collector (Ic) (Max)	6.7 A, 5.9 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	150, 150
Frequency - Transition	110 MHz, 130 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2.3 W
Supplier Device Package	8-SO
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	350 mV, 275 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Package / Case	Package / Case	Package / Case	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Current - Collector (Ic) (Max)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Power - Max [Max]
Nexperia USA Inc. PBSS4041SPN,115	0.154 in	8-SOIC	3.9 mm	8-SO	110 MHz 130 MHz	150 150	100 nA	60 V	150 °C	5.9 A 6.7 A	Surface Mount	275 mV 350 mV	1 NPN 1 PNP	2.3 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 60V 6.7A, 5.9A 130MHz, 110MHz 2.3W Surface Mount 8-SO

Technical documentation and resources