Discrete Semiconductor Products

SIR800ADP-T1-GE3

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MOSFET N-CH 20V 50.2A/177A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 20V 50.2A/177A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR800ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	50.2 A, 177 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	3415 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	62.5 W, 5 W
Rds On (Max) @ Id, Vgs	1.35 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIR800DP-T1-GE3	PowerPAK® SO-8	20 V	5.2 W 69 W	1.5 V	5125 pF	50 A	10 V	2.5 V	MOSFET (Metal Oxide)	133 nC	PowerPAK® SO-8	Surface Mount	N-Channel	-55 °C	150 °C	2.3 mOhm	12 V
Vishay General Semiconductor - Diodes Division SIR800DP-T1-RE3	PowerPAK® SO-8	20 V		1.5 V	5125 pF	50 A	10 V	2.5 V	MOSFET (Metal Oxide)	133 nC	PowerPAK® SO-8	Surface Mount	N-Channel	-55 °C	150 °C	2.3 mOhm	12 V
Vishay General Semiconductor - Diodes Division SIR800ADP-T1-GE3	PowerPAK® SO-8	20 V	5 W 62.5 W	1.5 V	3415 pF	50.2 A 177 A	10 V	2.5 V	MOSFET (Metal Oxide)		PowerPAK® SO-8	Surface Mount	N-Channel	-55 °C	150 °C	1.35 mOhm		12 V	-8 V	53 nC
Vishay General Semiconductor - Diodes Division SIR800ADP-T1-RE3	PowerPAK® SO-8	20 V	5 W 62.5 W	1.5 V	3415 pF	50.2 A 177 A	10 V	2.5 V	MOSFET (Metal Oxide)		PowerPAK® SO-8	Surface Mount	N-Channel	-55 °C	150 °C	1.35 mOhm		12 V	-8 V	53 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 50.2A (Ta), 177A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources