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PBSS302NX-QX
Discrete Semiconductor Products

PBSS302NX-QX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 20 V, 5.8 A NPN LOW VCESAT TRANSISTOR

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PBSS302NX-QX
Discrete Semiconductor Products

PBSS302NX-QX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 20 V, 5.8 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS302NX-QX
Current - Collector (Ic) (Max) [Max]5.3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]300
Frequency - Transition140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]0.6 W
QualificationAEC-Q101
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic220 mV
Voltage - Collector Emitter Breakdown (Max) [Max]20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.31
MouserN/A 1$ 0.60
10$ 0.52
100$ 0.36
500$ 0.30
1000$ 0.25
2000$ 0.23
5000$ 0.21
10000$ 0.20
25000$ 0.20

Description

General part information

PBSS302NX-Q Series

NPN low VCEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.