Specification	PSMN2R5-80SSEJ

Current - Continuous Drain (Id) @ 25°C	190 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	174 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	13485 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1235
Power Dissipation (Max)	341 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	LFPAK88 (SOT1235)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMN2R5-80SSE Series

N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	FET Type	Technology	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PSMN2R5-80SSEJ	3.6 V	190 A	13485 pF	10 V	175 °C	-55 °C	341 W	N-Channel	MOSFET (Metal Oxide)	20 V	Surface Mount	2.5 mOhm	SOT-1235	LFPAK88 (SOT1235)	174 nC	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1179	$ 7.53

Description

General part information

PSMN2R5-80SSE Series

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R5-80SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.