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BSR31-QX
Discrete Semiconductor Products

BSR31-QX

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Nexperia USA Inc.

60 V, 1 A PNP MEDIUM POWER TRANSISTOR

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BSR31-QX
Discrete Semiconductor Products

BSR31-QX

Active
Nexperia USA Inc.

60 V, 1 A PNP MEDIUM POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSR31-QX
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.35 W
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.23

Description

General part information

BSR31-Q Series

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package.