HMC415LP3ETR
LTBINGAP HBT POWER AMPLIFIER SMT, 4.9 - 5.9 GHZ
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HMC415LP3ETR
LTBINGAP HBT POWER AMPLIFIER SMT, 4.9 - 5.9 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC415LP3ETR |
|---|---|
| Current - Supply | 285 mA |
| Frequency [Max] | 5.9 GHz |
| Frequency [Min] | 4.9 GHz |
| Gain | 20 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 6 dB |
| P1dB | 23 dBm |
| Package / Case | 16-VFQFN Exposed Pad |
| RF Type | UNII, HiperLAN |
| Supplier Device Package | 16-QFN (3x3) |
| Voltage - Supply | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 18.80 | <4d |
| 10 | $ 16.38 | |||
| 25 | $ 15.54 | |||
| 100 | $ 14.38 | |||
| 250 | $ 13.69 | |||
| Tape & Reel (TR) | 500 | $ 13.21 | <4d | |
Description
General part information
HMC415 Series
The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.Applications802.11a WLANHiperLAN WLANAccess PointsUNII & ISM Radios
Documents
Technical documentation and resources