Discrete Semiconductor Products

SIS626DN-T1-GE3

Obsolete

MOSFET N-CH 25V 16A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 16A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS626DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	1925 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.4 V

Part	Package Name	Rds On (Max)	Gate Charge (Max)	Package / Case	Technology	FET Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SIS626DN-T1-GE3	PowerPAK® 1212-8	9 mOhm	60 nC	PowerPAK® 1212-8	MOSFET (Metal Oxide)	N-Channel	1.4 V	10 V	2.5 V	Surface Mount	-55 °C	150 °C	1925 pF	12 V	52 W	25 V	16 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 25 V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources