Specification	SSM6J511NU,LF

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	12 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	47 nC
Input Capacitance (Ciss) (Max) @ Vds	3350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Rds On (Max) @ Id, Vgs [Max]	9.1 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6J511NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -14 A, 0.01 Ω@4.5V, SOT-1220(UDFN6B)

Part	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type
Toshiba Semiconductor and Storage SSM6J511NU,LF	12 V	Surface Mount	6-UDFNB (2x2)	3350 pF	9.1 mOhm	14 A	1 V	150 °C	-55 °C	MOSFET (Metal Oxide)	47 nC	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	12988	$ 0.62

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -14 A, 0.01 Ω@4.5V, SOT-1220(UDFN6B)

Technical documentation and resources