
Discrete Semiconductor Products
IGW30N60H3FKSA1
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THE IGW30N60H3 IS A 600 V, 30 A IGBT DISCRETE IN TO-247 PACKAGE
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DocumentsApplication Note EN

Discrete Semiconductor Products
IGW30N60H3FKSA1
ActiveINFINEON
THE IGW30N60H3 IS A 600 V, 30 A IGBT DISCRETE IN TO-247 PACKAGE
Deep-Dive with AI
DocumentsApplication Note EN
Technical Specifications
Parameters and characteristics for this part
| Specification | IGW30N60H3FKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 165 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 187 W |
| Supplier Device Package | PG-TO247-3-1 |
| Switching Energy | 1.38 mJ |
| Td (on/off) @ 25°C | 207 ns, 21 ns |
| Test Condition | 400 V, 30 A, 15 V, 10.5 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4013 | $ 3.47 | |
| Tube | 1 | $ 2.93 | ||
| 30 | $ 2.32 | |||
| 120 | $ 1.99 | |||
| 510 | $ 1.77 | |||
| 1020 | $ 1.51 | |||
| 2010 | $ 1.43 | |||
| 5010 | $ 1.37 | |||
Description
General part information
IGW30N Series
High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Documents
Technical documentation and resources