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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H
Discrete Semiconductor Products

TTD1409B,S4X

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 400 V, 6 A, TO-220SIS

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TK56A12N1 - 12V - 300V MOSFETs, N-ch MOSFET, 120 V, 0.0075 Ω@10V, TO-220SIS, U-MOSⅧ-H
Discrete Semiconductor Products

TTD1409B,S4X

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 400 V, 6 A, TO-220SIS

Technical Specifications

Parameters and characteristics for this part

SpecificationTTD1409B,S4X
Current - Collector Cutoff (Max) [Max]20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]600
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]2 W
Supplier Device PackageTO-220SIS
Vce Saturation (Max) @ Ib, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.31
Tube 1$ 2.27
10$ 1.46
100$ 0.99
500$ 0.80
1000$ 0.73
2000$ 0.68
5000$ 0.65

Description

General part information

TTD1409 Series

Bipolar Transistors, NPN Bipolar Transistor, 400 V, 6 A, TO-220SIS