
Discrete Semiconductor Products
ZXTN2005GTA
ActiveDiodes Inc
TRANS, NPN, 25V, 7A, 150DEG C, 3W ROHS COMPLIANT: YES
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Discrete Semiconductor Products
ZXTN2005GTA
ActiveDiodes Inc
TRANS, NPN, 25V, 7A, 150DEG C, 3W ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXTN2005GTA |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 7 A |
| Current - Collector Cutoff (Max) [Max] | 50 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 hFE |
| Frequency - Transition | 150 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 3 W |
| Supplier Device Package | SOT-223-3 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ZXTN2005ZQ Series
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.
Documents
Technical documentation and resources