Discrete Semiconductor Products

IPL60R1K5C6SATMA1

Obsolete

IPL60R1K5C6SATMA1 INFINEON TECHNOLOGIES AG TRANSISTORS MOSFETS N-CH 600V 3A 8-PIN THIN-PAK EP T/R - ARROW.COM

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Discrete Semiconductor Products

Obsolete

IPL60R1K5C6SATMA1 INFINEON TECHNOLOGIES AG TRANSISTORS MOSFETS N-CH 600V 3A 8-PIN THIN-PAK EP T/R - ARROW.COM

Technical Specifications

Parameters and characteristics for this part

Specification	IPL60R1K5C6SATMA1

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	26.6 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	8-ThinPak (5x6)
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPL60R1K5C6SATMA1	10 V	8-PowerTDFN	3.5 V	Surface Mount	6	5	8-ThinPak (5x6)	20 V	1.5 Ohm	N-Channel	3 A	9.4 nC	600 V	MOSFET (Metal Oxide)	26.6 W	-40 °C	150 °C	200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 3A (Tc) 26.6W (Tc) Surface Mount 8-ThinPak (5x6)

Technical documentation and resources