Discrete Semiconductor Products

SPP11N65C3XKSA1

Obsolete

MOSFET N-CH 650V 11A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 11A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP11N65C3XKSA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology
INFINEON SPP11N60S5HKSA1	PG-TO220-3-1	125 W	150 °C	-55 °C	20 V	N-Channel	5.5 V	11 A	54 nC	380 mOhm	TO-220-3	10 V	1460 pF	Through Hole	650 V	MOSFET (Metal Oxide)
INFINEON SPP11N65C3XKSA1	PG-TO220-3-1	125 W	150 °C	-55 °C	20 V	N-Channel	3.9 V	11 A	60 nC	380 mOhm	TO-220-3	10 V	1200 pF	Through Hole	650 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources