Specification	PXN4R7-30QLJ

Current - Continuous Drain (Id) @ 25°C	15 A, 74 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46.2 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	42 W, 1.8 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	MLPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PXN4R7-30QL Series

30 V, N-channel Trench MOSFET

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. PXN4R7-30QLJ	8-PowerVDFN	2100 pF	Surface Mount	20 V	46.2 nC	MLPAK33	4.5 V 10 V	30 V	150 °C	-55 °C	4.7 mOhm	N-Channel	2.5 V	1.8 W 42 W	MOSFET (Metal Oxide)	15 A 74 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	10734	$ 1.31

Description

General part information

PXN4R7-30QL Series

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources

30 V, N-channel Trench MOSFET

Data sheet

MLPAK33; Reel pack for SMD, 13"; Q1/T1 product orientation

Packing information

plastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body

Package information