Discrete Semiconductor Products

IKB03N120H2ATMA1

Obsolete

IGBT 1200V 9.6A 62.5W TO263-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 1200V 9.6A 62.5W TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IKB03N120H2ATMA1

Current - Collector (Ic) (Max) [Max]	9.6 A
Current - Collector Pulsed (Icm)	9.9 A
Gate Charge	22 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]	62.5 W
Reverse Recovery Time (trr)	42 ns
Supplier Device Package	PG-TO263-3-2
Switching Energy	290 µJ
Td (on/off) @ 25°C [Max] [custom]	281 ns
Td (on/off) @ 25°C [Min] [custom]	9.2 ns
Test Condition	82 Ohm, 3 A, 800 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Gate Charge	Current - Collector Pulsed (Icm)	Package / Case	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Supplier Device Package	Test Condition	Mounting Type	Td (on/off) @ 25°C [Max] [custom]	Td (on/off) @ 25°C [Min] [custom]	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]
INFINEON IKB03N120H2ATMA1	22 nC	9.9 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	290 µJ	1200 V	62.5 W	PG-TO263-3-2	3 A 15 V 82 Ohm 800 V	Surface Mount	281 ns	9.2 ns	42 ns	2.8 V	-40 °C	150 °C	9.6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT 1200 V 9.6 A 62.5 W Surface Mount PG-TO263-3-2

Technical documentation and resources