Specification	SSM6J507NU,LF

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1150 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V, -25 V
Vgs(th) (Max) @ Id	2.2 V

SSM6J507NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -10 A, 0.02 Ω@10V, SOT-1220(UDFN6B)

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6J507NU,LF	6-UDFNB (2x2)	1.25 W	1150 pF	-25 V 20 V	150 °C	20.4 nC	P-Channel	30 V	MOSFET (Metal Oxide)	4 V	10 V	Surface Mount	20 mOhm	10 A	2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	49127	$ 0.58

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -30 V, -10 A, 0.02 Ω@10V, SOT-1220(UDFN6B)

Technical documentation and resources