Discrete Semiconductor Products

IDL08G65C5XUMA1

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DIODE SIL CARBIDE 650V 8A VSON-4

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Discrete Semiconductor Products

Unknown

DIODE SIL CARBIDE 650V 8A VSON-4

Technical Specifications

Parameters and characteristics for this part

Specification	IDL08G65C5XUMA1

Capacitance @ Vr, F	250 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	140 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	4-PowerTSFN
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-VSON-4
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Technology	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
INFINEON IDL08G65C5XUMA1	8 A	4-PowerTSFN	0 ns	SiC (Silicon Carbide) Schottky	500 mA	1.7 V	PG-VSON-4	140 µA	250 pF	Surface Mount	650 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 650 V 8A Surface Mount PG-VSON-4

Technical documentation and resources