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ONSEMI FFSD08120A
Discrete Semiconductor Products

IDD08SG60CXTMA2

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INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 8 A, 12 NC, TO-252 (DPAK)

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ONSEMI FFSD08120A
Discrete Semiconductor Products

IDD08SG60CXTMA2

Active
INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 8 A, 12 NC, TO-252 (DPAK)

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIDD08SG60CXTMA2
Capacitance @ Vr, F240 pF
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr70 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackagePG-TO252-3
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.58
10$ 3.03
100$ 2.21
500$ 2.00
Digi-Reel® 1$ 4.58
10$ 3.03
100$ 2.21
500$ 2.00
N/A 172$ 4.58
Tape & Reel (TR) 2500$ 1.63
NewarkEach (Supplied on Cut Tape) 1$ 5.68
1$ 5.68
10$ 4.27
10$ 4.27
25$ 4.07
25$ 4.07
50$ 3.74
50$ 3.74
100$ 3.39
100$ 3.39
250$ 3.24
250$ 3.24
500$ 3.11
500$ 3.11
1000$ 2.94
1000$ 2.94

Description

General part information

IDD08SG60 Series

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Documents

Technical documentation and resources