Discrete Semiconductor Products

MCH6626-TL-E

Obsolete

MOSFET N/P-CH 20V 1.6A/1A 6MCPH

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 1.6A/1A 6MCPH

Technical Specifications

Parameters and characteristics for this part

Specification	MCH6626-TL-E

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	1.6 A, 1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	105 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	6-MCPH
Technology	MOSFET (Metal Oxide)

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Configuration	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature
ON Semiconductor MCH6626-TL-E	6-SMD Flat Leads	1 A 1.6 A	Logic Level Gate	105 pF	800 mW	1.4 nC	230 mOhm	MOSFET (Metal Oxide)	6-MCPH	N and P-Channel	Surface Mount	20 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 1.6A, 1A 800mW Surface Mount 6-MCPH

Technical documentation and resources

No documents available