Specification	PSMN2R3-100SSEJ

Current - Continuous Drain (Id) @ 25°C	255 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	160 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	17200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1235
Power Dissipation (Max)	341 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	LFPAK88 (SOT1235)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMN2R3-100SSE Series

N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88

Part	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs
Nexperia USA Inc. PSMN2R3-100SSEJ	SOT-1235	N-Channel	255 A	MOSFET (Metal Oxide)	20 V	341 W	10 V	17200 pF	175 °C	-55 °C	Surface Mount	100 V	160 nC	LFPAK88 (SOT1235)	2.2 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 8.41

Description

General part information

PSMN2R3-100SSE Series

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.