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PowerPAK SO-8
Discrete Semiconductor Products

SI7434DP-T1-E3

LTB
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 2.3A PPAK SO-8

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DocumentsDatasheet
PowerPAK SO-8
Discrete Semiconductor Products

SI7434DP-T1-E3

LTB
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 2.3A PPAK SO-8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7434DP-T1-E3
Current - Continuous Drain (Id) @ 25°C2.3 A
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]50 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)1.9 W
Rds On (Max) @ Id, Vgs155 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.15
10$ 2.73
100$ 1.92
Digi-Reel® 1$ 4.15
10$ 2.73
100$ 1.92
Tape & Reel (TR) 3000$ 1.47
6000$ 1.41

Description

General part information

SI7434 Series

N-Channel 250 V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources