Discrete Semiconductor Products

IRLB3034PBF

NRND

MOSFET N-CH 40V 195A TO220AB

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Discrete Semiconductor Products

NRND

MOSFET N-CH 40V 195A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRLB3034PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	162 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	10315 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs (Max)	FET Type
INFINEON IRLB3034PBF	1.7 mOhm	TO-220-3	4.5 V 10 V	40 V	2.5 V	10315 pF	162 nC	375 W	175 °C	-55 °C	MOSFET (Metal Oxide)	195 A	Through Hole	TO-220AB	20 V	N-Channel

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General part information

N-Channel 40 V 195A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources