Specification	PSMN8R0-80YLX

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8167 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

PSMN8R0-80YL Series

N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56

Part	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. PSMN8R0-80YLX	2.1 V	20 V	N-Channel	80 V	100 A	SC-100 SOT-669	Surface Mount	8 mOhm	5 V 10 V	MOSFET (Metal Oxide)	8167 pF	104 nC	LFPAK56 Power-SO8	175 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.76

Description

General part information

PSMN8R0-80YL Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.