Specification	PMEG6010AESBYL

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	650 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	2-XDFN
Reverse Recovery Time (trr)	2.4 ns
Speed	500 ns, 200 mA
Supplier Device Package	DSN1006-2
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If [Max]	625 mV

PMEG6010AESB Series

60 V, 1 A low VF MEGA Schottky barrier rectifier

Part	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Operating Temperature - Junction [Max]	Mounting Type	Speed	Capacitance @ Vr, F
Nexperia USA Inc. PMEG6010AESBYL	650 µA	Schottky	625 mV	2.4 ns	1 A	60 V	2-XDFN	DSN1006-2	150 °C	Surface Mount	200 mA 500 ns	20 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.44

Description

General part information

PMEG6010AESB Series

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package.