Specification	BUK761R7-40E,118

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	9700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	324 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

BUK761R7-40E Series

N-channel TrenchMOS standard level FET

Part	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Grade	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)
Nexperia USA Inc. BUK761R7-40E,118	AEC-Q101	9700 pF	D2PAK	MOSFET (Metal Oxide)	Automotive	Surface Mount	118 nC	324 W	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 A	175 °C	-55 °C	10 V	1.6 mOhm	N-Channel	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

BUK761R7-40E Series

Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.