Discrete Semiconductor Products

94-2304

Obsolete

MOSFET N-CH 30V 116A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 116A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	94-2304

Current - Continuous Drain (Id) @ 25°C	116 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3290 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Drive Voltage (Max Rds On, Min Rds On)
INFINEON 94-2304	TO-220AB	N-Channel	Through Hole	7 mOhm	3290 pF	116 A	16 V	TO-220-3	180 W	30 V	60 nC	1 V	175 °C	-55 °C	MOSFET (Metal Oxide)	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 30 V 116A (Tc) 180W (Tc) Through Hole TO-220AB

Technical documentation and resources