Discrete Semiconductor Products

BC858B RFG

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BIPOLAR TRANSISTORS - BJT -30V, -0.1A, PNP BIPOLAR TRANSISTOR

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT -30V, -0.1A, PNP BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BC858B RFG

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	220
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Supplier Device Package	SOT-23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	0.65 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Transistor Type	Frequency - Transition	Package / Case	Supplier Device Package	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Taiwan Semiconductor Corporation BC858C RFG	PNP	100 MHz	SC-59 SOT-23-3 TO-236-3	SOT-23	Surface Mount	420	200 mW	100 nA	100 mA	0.65 V	30 V	150 °C	-55 °C
Taiwan Semiconductor Corporation BC858A RFG	PNP	100 MHz	SC-59 SOT-23-3 TO-236-3	SOT-23	Surface Mount	125	200 mW	100 nA	100 mA	0.65 V	30 V	150 °C	-55 °C
Taiwan Semiconductor Corporation BC858B RFG	PNP	100 MHz	SC-59 SOT-23-3 TO-236-3	SOT-23	Surface Mount	220	200 mW	100 nA	100 mA	0.65 V	30 V	150 °C	-55 °C

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General part information

Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 200 mW Surface Mount SOT-23

Technical documentation and resources