Discrete Semiconductor Products

IRF7509TR

Obsolete

MOSFET N/P-CH 30V 2.7A/2A MICRO8

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 2.7A/2A MICRO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7509TR

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.7 A, 2 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP, 8-MSOP
Package / Case	0.118 in, 3 mm Width
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case	FET Feature	Drain to Source Voltage (Vdss)	Power - Max [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Configuration	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IRF7509TRPBF	MOSFET (Metal Oxide)	12 nC	210 pF	8-MSOP 8-TSSOP	0.118 in 3 mm Width	Logic Level Gate	30 V	1.25 W	1 V	Micro8™	N and P-Channel	2 A 2.7 A	110 mOhm	Surface Mount	150 °C	-55 °C
INFINEON IRF7509TR	MOSFET (Metal Oxide)	12 nC	210 pF	8-MSOP 8-TSSOP	0.118 in 3 mm Width	Logic Level Gate	30 V	1.25 W	1 V	Micro8™	N and P-Channel	2 A 2.7 A	110 mOhm	Surface Mount	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.54