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TO-262-3
Discrete Semiconductor Products

IRFSL3306PBF

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INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 4.2 MOHM;

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TO-262-3
Discrete Semiconductor Products

IRFSL3306PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 4.2 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFSL3306PBF
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]120 nC
Input Capacitance (Ciss) (Max) @ Vds4520 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)230 W
Rds On (Max) @ Id, Vgs4.2 mOhm
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.86
Tube 1000$ 1.12
MouserN/A 1$ 2.38
10$ 1.76
25$ 1.61
100$ 1.40
500$ 1.18
1000$ 1.09
2000$ 1.04

Description

General part information

IRFSL3306 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources