Specification	IMBG120R060M1HXTMA1

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1145 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	181 W
Rds On (Max) @ Id, Vgs	83 mOhm
Supplier Device Package	PG-TO263-7-12
Vgs (Max) [Max]	18 V, -15 V
Vgs(th) (Max) @ Id	5.7 V

CoolSiC 1200V Series

Part	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)
INFINEON IMBG120R060M1HXTMA1	181 W	Surface Mount	1145 pF	-15 V 18 V	34 nC	5.7 V	PG-TO263-7-12	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	175 °C	-55 °C	36 A	83 mOhm	N-Channel	1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1790	$ 9.53
Mouser	N/A	1	$ 9.41
		10	$ 6.82
		100	$ 5.07
		500	$ 4.55
		1000	$ 4.54

Description

General part information

CoolSiC 1200V Series

The CoolSiC™ 1200 V, 60 mΩSiC MOSFETin a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

IMBG120R060M1HXTMA1 | Datasheet

Datasheet