Discrete Semiconductor Products

SI7160DP-T1-GE3

Obsolete

MOSFET N-CH 30V 20A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 20A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7160DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	66 nC, 66 nC
Input Capacitance (Ciss) (Max)	2970 pF, 2970 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	27.7 W, 5 W
Rds On (Max)	8.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.5 V

Part	Gate Charge (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Vgs(th) (Max)	Technology	Package Name	FET Type
Vishay Dale SI7160DP-T1-GE3	66 nC 66 nC	PowerPAK® SO-8	2970 pF 2970 pF	20 A	30 V	10 V	4.5 V	5 W 27.7 W	Surface Mount	8.7 mOhm	-55 °C	150 °C	16 V	2.5 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	30d+

3D models and CAD resources for this part

General part information

N-Channel 30 V 20A (Tc) 5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources