SICPT20120Y-BP

Active

RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 20A, 1200V V(RRM), SILICON CARBIDE, TO-247AD,

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 20A, 1200V V(RRM), SILICON CARBIDE, TO-247AD,

Technical Specifications

Parameters and characteristics for this part

Specification	SICPT20120Y-BP

Capacitance @ Vr, F	1552 pF
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.55 V

Part	Technology	Capacitance @ Vr, F	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Micro Commercial Components SICPT20120Y-BP	SiC (Silicon Carbide) Schottky	1552 pF	TO-247-2	1.2 kV	0 ns	No Recovery Time	175 ░C	-55 C	TO-247AD	Through Hole	1.55 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1800	$ 5.28

General part information

Diode 1200 V 20A Through Hole TO-247AD

Technical documentation and resources