Discrete Semiconductor Products
RS6E122BGTB1
ActiveRohm Semiconductor
NCH 30V 155A, HSOP8, POWER MOSFET
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Discrete Semiconductor Products
RS6E122BGTB1
ActiveRohm Semiconductor
NCH 30V 155A, HSOP8, POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RS6E122BGTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 155 A, 120 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3310 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 89 W, 3 W |
| Rds On (Max) @ Id, Vgs | 2.16 mOhm |
| Supplier Device Package | 8-HSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2500 | $ 2.85 | |
Description
General part information
RS6E122BG Series
RS6E122BG is a power MOSFET with low-on resistance and High power package, suitable for switching.
Documents
Technical documentation and resources