Discrete Semiconductor Products

VS-FC80NA20

Obsolete

MOSFET N-CH 200V 108A SOT227

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 108A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-FC80NA20

Current - Continuous Drain (Id) @ 25°C	108 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	161 nC
Input Capacitance (Ciss) (Max) @ Vds	10720 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division VS-FC80NA20	30 V	161 nC	200 V	108 A	Chassis Mount	N-Channel	-55 °C	175 ░C	SOT-227	10720 pF	SOT-227-4 miniBLOC	5.5 V	10 V	MOSFET (Metal Oxide)	14 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 108A (Tc) 405W (Tc) Chassis Mount SOT-227

Technical documentation and resources

No documents available