
Discrete Semiconductor Products
B6M-E3/45
ObsoleteVishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 500MA MBM
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DocumentsDatasheet

Discrete Semiconductor Products
B6M-E3/45
ObsoleteVishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 500MA MBM
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | B6M-E3/45 |
|---|---|
| Current - Average Rectified (Io) | 500 mA |
| Current - Reverse Leakage @ Vr | 5 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-DIP (0.200", 5.08mm) |
| Supplier Device Package | MBM |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
| Voltage - Peak Reverse (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.23 | |
Description
General part information
B6M Series
Bridge Rectifier Single Phase Standard 600 V Through Hole MBM
Documents
Technical documentation and resources