Discrete Semiconductor Products

NTHD5904NT3

Obsolete

MOSFET N-CH 20V 2.5A CHIPFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 2.5A CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	NTHD5904NT3

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6 nC
Input Capacitance (Ciss) (Max) @ Vds	465 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	640 mW
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.2 V

Part	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]
ON Semiconductor NTHD5904NT3	1.2 V	N-Channel	Surface Mount	ChipFET™	6 nC	640 mW	MOSFET (Metal Oxide)	65 mOhm	20 V	8 V	2.5 A	2.5 V 4.5 V	-55 °C	150 °C	465 pF
ON Semiconductor NTHD5904T1	600 mV		Surface Mount	ChipFET™			MOSFET (Metal Oxide)	75 mOhm	20 V		3.1 A		-55 °C	150 °C		Logic Level Gate	6 nC	2 N-Channel (Dual)	1.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 2.5A (Ta) 640mW (Ta) Surface Mount ChipFET™

Technical documentation and resources